AO4832 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO4832
30V Dual N-channel MOSFET
General Description
The AO4832 uses advanced trench technology to provide excellent R_DS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and general purpose applications.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
30V
10A
< 13mΩ
< 17.5mΩ
Top View
S2 1
G2 2
S1 3
G1 4
8 D2
7 ^D2
6 D1
5 D1
D1
G1
G2
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_D
I_DM
I_AS, I_AR
E_AS, E_AR
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
10
8
55
22
24
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
62.5
90
40
D2
S2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
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