AO4830 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 80V Dual N-Channel MOSFET

AO4830
80V Dual N-channel MOSFET
General Description
The AO4830 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge . This
device is suitable for use as a load switch or in PWM applications.
Features
V_DS (V) = 80V
I_D = 3.5A
R_DS(ON) < 75mΩ
(V_GS = 10V)
(V_GS = 10V)
SOIC-8
Top View
S2
D2
G2
D2
S1
D1
G1
D1
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
Power Dissipation ^B
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
80
±30
3.5
2.9
18
16
12.8
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
48
74
Max
62.5
90
Maximum Junction-to-Lead
Steady-State
R_θJL
32
40
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
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