AO4821 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AO4821
12V Dual P-Channel MOSFET
General Description
The AO4821 uses advanced trench technology to provide excellent R _{, DS(ON) low gate charge and operation with gate}
voltages as low as 1.8V. This device is suitable for use as a load switch.
Features
V_DS
I_D (at V_GS=-4.5V)
R_DS(ON) (at V_GS=-4.5V)
R_DS(ON) (at V_GS =-2.5V)
R_DS(ON) (at V_GS =-1.8V)
-12V
-9A
< 19mΩ
< 24mΩ
< 30mΩ
SOIC-8
Top View
S2 1
G2 2
S1 3
G1 4
8 D2
7 ^D2
6 D1
5 D1
D1
D2
1
Rg
G1
Rg
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-12
±8
-9
-7
-60
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
62.5
90
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
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