AO4818 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO4818
Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO4818 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM ^{applications.}Standard Product AO4818 is Pb-free
(meets ROHS & Sony 259 specifications). AO4818L is a Green Product ordering option. AO4818 and
AO4818L are electrically identical.
Features
V_DS (V) = 30V
I_D = 8.5A (V_GS = 10V)
R_DS(ON) < 19mΩ (V_GS = 10V)
R_DS(ON) < 28mΩ (V_GS = 4.5V)
D1
D2
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
8.5
6.6
40
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
74
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
35
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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