AO4817 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AO4817
25V Dual P-Channel MOSFET
General Description
The AO4817 uses advanced trench technology to provide excellent R_DS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The
device is ESD protected.
Features
V_DS (V) = -30V
I_D = -8A (V_GS = -20V)
R_DS(ON) < 18mΩ (V_GS = -20V)
R_DS(ON) < 21mΩ (V_GS = -10V)
ESD Rating: 1.5KV HBM
SOIC-8
Top View
S2 1
G2 2
S1 3
G1 4
8 D2
7 ^D2
6 D1
5 D1
D1
D2
G1
G2
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±25
-8
-6.9
-40
2
1.44
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
50
73
62.5
110
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
31
40
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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