AO4806 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO4806
Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO4806 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. They
offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for
use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Standard Product AO4806 is Pb-free (meets ROHS & Sony 259 specifications). AO4806L is a Green
Product ordering option. AO4806 and AO4806L are electricall yidentical.
Features
V_DS (V) = 20V
I_D = 9.4A (V_GS = 10V)
R_DS(ON) < 14mΩ (V_GS = 10V)
R_DS(ON) < 15mΩ (V_GS = 4.5V)
R_DS(ON) < 21mΩ (V_GS = 2.5V)
R_DS(ON) < 30mΩ (V_GS = 1.8V)
ESD Rating: 2000V HBM
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
D1
D2
G1
G2
SOIC-8
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±12
9.4
7.5
40
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
45
72
Steady-State
R_θJL
34
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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