AO4802 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO4802, AO4802L
Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO4802 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. They
offer operation over a wide gate drive range from 1.8V to 12V. The two devices may be used individually, in
parallel or to form a bidirectional blocking switch. AO4802L ( Green Product ) is offered in a lead-free
package.
Features
V_DS (V) = 30V
I_D = 7A
R_DS(ON) < 26mΩ (V_GS = 10V)
R_DS(ON) < 30mΩ (V_GS = 4.5V)
R_DS(ON) < 40mΩ (V_GS = 2.5V)
R_DS(ON) < 70mΩ (V_GS = 1.8V)
D1
D2
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
SOIC-8
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
7
6
40
2
1.44
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
48
74
Steady-State
R_θJL
35
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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