AO4801 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AO4801
Dual P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO4801 uses advanced trench technology to provide excellent R_DS(ON,₎ low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It may be used in a
common drain arrangement to form a bidirectional blocking switch._{Standard Product AO4801 is Pb-free (meets ROHS &}
Sony 259 specifications). AO4801L is a Green Product ordering option. AO4801 and AO4801L are electrically _identical.
Features
V_DS (V) = -30V
I_D = -5 A (V_GS = -10V)
R_DS(ON) < 49mΩ (V_GS = -10V)
R_DS(ON) < 64mΩ (V_GS = -4.5V)
R_DS(ON) < 120mΩ (V_GS = -2.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±12
-5
-4.2
-30
2
1.44
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
62.5
74
110
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
35
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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