AO4772 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AO4772
30V N-Channel MOSFET
General Description
AO4772 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional blocking switch,or for "standard buck" DC-DC conversion
applications.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
30V
6A
< 30mΩ
< 42mΩ
SOIC-8
Top View
A
K
A
K
S
D
G
D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
6
I_D
5
I_DM
30
I_AS, I_AR
10
E_AS, E_AR
5
Schottky reverse voltage
V_KA
Continuous Forward ^TA=25°C
Current
T_A=70°C
I_F
T_A=25°C
Power Dissipation ^B T_A=70°C
2
P_D
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter: MOSFET
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Parameter: Schottky
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
31
1/6
K
D
G
A
S
Schottky
30
4
3
2
1.3
-55 to 150
Max
62.5
90
40
62.5
90
40
Units
V
V
A
A
mJ
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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