AO4771 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V P-Channel MOSFET

AO4771
30V P-Channel MOSFET
General Description
AO4771 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional blocking switch,or for "standard buck" DC-DC conversion
applications.
Features
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS=-4.5V)
-30V
-4A
< 68mΩ
< 105mΩ
SOIC-8
Top View
A
1
A
2
S
3
G
4
8K
7
K
6D
5D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Drain-Source Voltage
V_DS
-30
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
-4
I_D
-3
I_DM
-18
I_AS, I_AR
11
E_AS, E_AR
6
Schottky reverse voltage
V_KA
Continuous Forward ^TA=25°C
Current
T_A=70°C
I_F
T_A=25°C
Power Dissipation ^B T_A=70°C
2
P_D
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter: MOSFET
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Parameter: Schottky
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
49
72
Maximum Junction-to-Lead
Steady-State
R_θJL
31
1/6
A
D
G
K
S
Schottky
30
4
2.5
2
1.3
-55 to 150
Max
62.5
90
40
62.5
90
40
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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