AO4722 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AO4722
30V N-Channel MOSFET
General Description
SRFET ^TM The AO4722 uses advanced trench technology with a monolithically integrated
Schottky diode to provide excellent R_DS(ON),and low gate charge. This device is suitable for use
as a low side FET in SMPS, load switching and general purpose applications.
Features
V_DS (V) = 30V
I_D =11.6A (V_GS = 10V)
R_DS(ON) < 14mΩ (V_GS = 10V)
R_DS(ON) < 22mΩ (V_GS = 4.5V)
SOIC-8
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_DSM
Pulsed Drain Current ^B
I_DM
Avalanche Current ^B
I_AR
Repetitive avalanche energy L=0.3mH ^B
E_AR
11.6
8.5
9.3
6.8
100
17
43
Power Dissipation
T_A=25°C
T_A=70°C
3.1
1.7
P_DSM
2.0
1.1
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
t ≤ 10s
Steady-State
R_θJA
Steady-State
R_θJL
Typ
32
60
17
Max
40
75
24
Units
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
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