AO4707 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4707
Dual P-Channel Enhancement Mode Field
Effect Transistor with Schottky Diode
General Description
The AO4707 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. A
Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters.
Standard Product AO8820 is Pb-free (meets ROHS & Sony 259 specifications). AO8820L
is a Green Product ordering option. AO8820 and AO8820L are electrically identical.
Features
V_DS (V) = -30V
I_D = -8A (V_GS = -10V)
R_DS(ON) < 33mΩ (V_GS = -10V)
R_DS(ON) < 56mΩ (V_GS = -4.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 3A, V_F<0.52V@3A
A 1 8 D/K
S 2 7 D/K
S 3 6 D/K
G 4 5 D/K
D
K
SOIC-8
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ^A
Pulsed Drain Current ^B
T_A=25°C
T_A=70°C
I_D
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current ^A
Pulsed Forward Current ^B
T_A=25°C
T_A=70°C
I_F
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
S
A
MOSFET
-30
±20
-8
-6.6
-40
3
2
-55 to 150
Schottky
30
5
3.5
30
3
2
-55 to 150
Units
V
V
A
V
A
W
°C
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
24
54
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
21
Thermal Characteristics Schottky
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
36
67
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
25
Max
Units
40
75
°C/W
30
40
75
°C/W
30
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