AO4706 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4706
30V N-Channel MOSFET
General Description
SRFET ^TM The AO4706 uses advanced trench technology with a monolithically integrated Schottky
diode to provide excellent R_DS(ON),and low gate charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose applications.
Features
V_DS (V) = 30V
I_D =16.5A (V_GS = 10V)
R_DS(ON) < 6.8mΩ (V_GS = 10V)
R_DS(ON) < 8.2mΩ (V_GS = 4.5V)
D
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^AF
T_A=70°C
I_DSM
Pulsed Drain Current ^B
I_DM
Avalanche Current ^B
I_AR
Repetitive avalanche energy L=0.3mH ^B
E_AR
Power Dissipation
T_A=25°C
T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
16.5
13.2
100
30
135
3.1
2.0
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
31
59
40
75
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
16
24
Units
V
V
A
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
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