AO4701 Datasheet, PDF (1/8 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4701
P-Channel Enhancement Mode Field
Effect Transistor with Schottky Diode
General Description
The AO4701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A
Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.
Features
V_DS (V) = -30V
I_D = -5A
R_DS(ON) < 49mΩ (V_GS = 10V)
R_DS(ON) < 64mΩ (V_GS = 4.5V)
R_DS(ON) < 120mΩ (V_GS = 2.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 3A, V_F=0.5V@1A
A 18K
A 27K
S ³⁶D
G ⁴⁵D
D
K
SOIC-8
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^A
Pulsed Drain Current^B
T_A=25°C
T_A=70°C
I_D
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current^A
Pulsed Forward Current^B
T_A=25°C
T_A=70°C
I_F
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
S
A
MOSFET
-30
±12
-5
-4.2
-30
2
1.44
-55 to 150
Schottky
30
4.4
3.2
30
2
1.44
-55 to 150
Units
V
V
A
V
A
W
°C
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
48
74
Maximum Junction-to-Lead^C
Steady-State
R_θJL
35
Thermal Characteristics Schottky
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
49
72
Maximum Junction-to-Lead^C
Steady-State
R_θJL
37
Max
Units
62.5
110
°C/W
40
62.5
110
°C/W
42
1/8
www.freescale.net.cn