AO4700 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4700
N-Channel Enhancement Mode Field
Effect Transistor with Schottky Diode
General Description
The AO4700 uses advanced trench technology to provide excellent R _DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional blocking switch, or for non-synchronous DC-DC conversion
applications. Standard Product AO4700 is Pb-free (meets _{ROHS & Sony 259 specifications). AO4700L is a Green}
Product ordering option. AO4700 and AO4700L are electrically identical.
Features
V_DS (V) = 30V
I_D = 6.9A (V_GS = 10V)
R_DS(ON) < 28mΩ (V_GS = 10V)
R_DS(ON) < 42mΩ (V_GS = 4.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 4A, V_F<0.5V@3A
A 18K
A 27K
S 36D
G 45D
SOIC-8
D
K
G
S
A
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ^A
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current ^A
T_A=25°C
T_A=70°C
I_F
Pulsed Forward Current ^B
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
MOSFET
30
±20
6.9
5.8
30
2
1.28
-55 to 150
Schottky
30
4
2.6
40
2
1.28
-55 to 150
Units
V
V
A
V
A
W
°C
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
74
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
35
Thermal Characteristics Schottky
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
44
73
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
31
Max
Units
62.5
110
°C/W
40
62.5
110
°C/W
40
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