AO4629 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – 30V Complementary MOSFET

AO4629
30V Complementary MOSFET
General Description
AO4629 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
Features
N-Channel
V_DS= 30V
I_D= 6A (V_GS=10V)
R_DS(ON)
< 30mΩ (V_GS=10V)
< 42mΩ (V_GS=4.5V)
P-Channel
-30V
-5.5A (V_GS=-10V)
R_DS(ON)
< 41mΩ (V_GS=-10V)
< 74mΩ (V_GS=-4.5V)
D2
D1
Top View
S2 1
G2 2
S1 3
G1 4
8 D2
7
D2
6 D1
5 D1
G2
G1
S2
S1
n-channel
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max n-channel Max p-channel
Drain-Source Voltage
V_DS
30
-30
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
6
-5.5
I_D
5
-4.5
I_DM
30
-25
I_AS, I_AR
10
17
E_AS, E_AR
5
14
T_A=25°C
Power Dissipation ^B T_A=70°C
2
2
P_D
1.3
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Units
V
V
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
Units
62.5
°C/W
90
°C/W
40
°C/W
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