AO4622 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4622
20V Dual P + N-Channel MOSFET
General Description
The AO4622 uses advanced trench technology MOSFETs to provide excellent R_{DS(ON) and low gate}
charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a
host of other applications.
Features
N-Channel
P-Channel
V_DS (V) = 20V
-20V
I_D = 7.3A (V_GS=4.5V) -5A (V_GS=-4.5V)
R_DS(ON)
R_DS(ON)
< 23mΩ (V_GS=10V)
< 53mΩ (V_GS = -4.5V)
< 30mΩ (V_GS=4.5V) < 87mΩ (V_GS = -2.5V)
< 84mΩ (V_GS=2.5V)
D1
D2
Top View
S1
D1
G1
D1
S2
D2
G2
D2
G1
G2
S1
n-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±16
Continuous Drain TA=25°C
7.3
Current ^AF
T_A=70°C
I_D
6.2
Pulsed Drain Current ^B
I_DM
35
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH ^B
E_AR
2
1.44
13
25
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-20
±12
-5
-4.2
-25
2
1.44
13
25
-55 to 150
S2
p-channel
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
n-ch
n-ch
48
74
Maximum Junction-to-Lead ^C
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Steady-State
t ≤ 10s
Steady-State
R_θJL
n-ch
35
R_θJA
p-ch
p-ch
48
74
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
p-ch
35
Max
Units
62.5
°C/W
110
°C/W
40
°C/W
62.5
°C/W
110
°C/W
40
°C/W
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