AO4620 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4620
Complementary Enhancement
Mode Field Effect Transistor
General Description
The AO4620 uses advanced trench technology MOSFETs to provide excellent R_DS(ON) and low gate
charge. The complementary MOSFETs may be used in inverter and other applications.
Features
n-channel
V_DS (V) = 30V
I_D = 7.2A (V_GS=10V)
R_DS(ON)
< 24mΩ (V_GS=10V)
< 36mΩ (V_GS=4.5V)
p-channel
-30V
-5.3A (V_GS = -10V)
R_DS(ON)
< 32mΩ (V_GS = -10V)
< 55mΩ (V_GS = -4.5V)
Top View
S2 1
G2 2
S1 3
G1 4
8 D2
7 ^D2
6 D1
5 D1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain TA=25°C
7.2
Current ^F
T_A=70°C
I_D
6.2
Pulsed Drain Current ^B
I_DM
64
T_A=25°C
Power Dissipation ^F T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH ^B
E_AR
2
1.44
9
12
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
D2
D1
G2
S2
n-channel
G1
S1
p-channel
Max p-channel
-30
±20
-5.3
-4.5
-40
2
1.44
17
43
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
n-ch
n-ch
50
80
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
n-ch
32
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
p-ch
p-ch
50
80
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
p-ch
32
Max
Units
62.5
°C/W
100
°C/W
40
°C/W
62.5
°C/W
100
°C/W
40
°C/W
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