AO4616 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4616
30V Complementary MOSFET
General Description
The AO4616 uses advanced trench technology to provide excellent R_{DS(ON) and low gate charge. This}
complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
Features
N-Channel
V_DS= 30V
I_D= 8A (V_GS=10V)
R_DS(ON)
< 20mΩ (V_GS=10V)
< 28mΩ (V_GS=4.5V)
P-Channel
-30V
-7A (V_GS=-10V)
R_DS(ON)
< 22mΩ (VGS=-10V)
< 40mΩ (VGS=-4.5V)
SOIC-8
D2
D1
Top View
S2
D2
G2
D2
G2
S1
D1
G1
D1
G1
S2
S1
n-channel
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max n-channel Max p-channel
Drain-Source Voltage
V_DS
30
-30
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
8
-7
I_D
6.5
-6
I_DM
40
-40
I_AS, I_AR
19
27
E_AS, E_AR
18
36
T_A=25°C
Power Dissipation ^B T_A=70°C
2
2
P_D
1.3
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Units
V
V
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
Units
62.5
°C/W
90
°C/W
40
°C/W