AO4614B Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4614B
40V Dual P + N-Channel MOSFET
General Description
The AO4614B uses advanced trench technology MOSFETs to provide excellent R_{DS(ON) and low gate}
charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features
N-Channel
V_DS (V) = 40V,
I_D = 6A (V_GS=10V)
R_DS(ON)
< 30mΩ (V_GS=10V)
< 38mΩ (V_GS=4.5V)
P-Channel
-40V
-5A (VGS=-10V)
< 45mΩ (VGS= -10V)
< 63mΩ (VGS= -4.5V)
SOIC-8
D2
D1
Top View
S2
1
8 D2
G2
2
7 ^D2
S1
3
6 D1 _G2
G1
4
5 D1
G1
S2
n-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Avalanche Current ^B
I_AR
Repetitive avalanche energy L=0.1mH ^B
E_AR
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Max n-channel
40
±20
6
5
30
14
9.8
2
1.28
-55 to 150
Max p-channel
-40
±20
-5
-4
-30
-20
20
2
1.28
-55 to 150
S1
p-channel
Units
V
V
A
mJ
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Device
Typ
n-ch
48
n-ch
74
n-ch
35
p-ch
48
p-ch
74
p-ch
35
Max
62.5
110
50
62.5
110
50
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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