AO4612 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4612
60V Complementary Enhancement
Mode Field Effect Transistor
General Description
The AO4612 uses advanced trench technology MOSFETs to provide excellent R_DS(ON) and low gate
charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features
n-channel
V_DS (V) = 60V
I_D = 4.5A (V_GS=10V)
R_DS(ON)
< 56mΩ (V_GS=10V)
< 77mΩ (V_GS=4.5V)
p-channel
-60V
-3.2A (V_GS = -10V)
R_DS(ON)
< 105mΩ (V_GS = -10V)
< 135mΩ (V_GS = -4.5V)
SOIC-8
D2
D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
60
Gate-Source Voltage
V_GS
±20
Continuous Drain T_A=25°C
4.5
Current ^A
T_A=70°C
I_D
3.6
Pulsed Drain Current ^B
I_DM
20
Power Dissipation
T_A=25°C
T_A=70°C
P_D
2
1.28
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^A Steady-State
R_θJA
48
74
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
35
Max p-channel
-60
±20
-3.2
-2.6
-20
2
1.28
-55 to 150
Max
62.5
90
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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