AO4610 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4610
Complementary Enhancement Mode
Field Effect Transistor
General Description
The AO4610 uses advanced trench technology MOSFETs to provide excellent _{RDS(ON) and low gate charge. The}
complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged
with the n-channel FETto minimize body diode losses. Standard _{Product AO4610 is Pb-free (meets ROHS &}
Sony 259 specifications). AO4610L is a Green Product ordering option. AO4610 and AO4610L are electrically
identical
Features
n-channel
p-channel
V_DS (V) = 30V
I_D = 8.5A(V_GS=10V)
R_DS(ON)
-30V
-7.1A(V_GS = -10V)
R_DS(ON)
< 18mΩ (V_GS=10V)
< 25mΩ (V_GS = -10V)
< 28mΩ (V_GS=4.5V)
< 40mΩ (V_GS = -4.5V)
V_F<0.5V@1A
D2
D1
S2/A 1 8 D2/K
G2 2 7 D2/K
S1 ^{3 6} D1
G1 ^{4 5} D1
SOIC-8
K
A
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel Max p-channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
Pulsed Drain Current^B
T_A=25°C
Power Dissipation T_A=70°C
Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
P_D
T_J, T_STG
30
±20
8.5
6.6
30
2
1.28
-55 to 150
-30
±20
-7.1
-5.6
-30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward T_A=25°C
Current ^A
T_A=70°C
Pulsed Forward Current^B
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
I_D
I_DM
P_D
T_J, T_STG
Maximum Schottky
30
3
2
20
2
1.28
-55 to 150
Units
V
A
W
°C
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