AO4609 Datasheet, PDF (1/12 Pages) List of Unclassifed Manufacturers – Complementary Enhancement Mode Field Effect Transistor

AO4609
Complementary Enhancement Mode
Field Effect Transistor
General Description
The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other
applications.
Features
n-channel
p-channel
V_DS (V) = 30V
-30V
I_D = 8.5A
-3A
R_DS(ON)
R_DS(ON)
< 18mΩ (V_GS=10V)
< 130mΩ (V_GS = 10V)
< 28mΩ (V_GS=4.5V)
< 180mΩ (V_GS = 4.5V)
< 260mΩ (V_GS = 2.5V)
D2
D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain T_A=25°C
8.5
Current ^A
T_A=70°C
I_D
6.6
Pulsed Drain Current ^B
I_DM
40
Power Dissipation
T_A=25°C
T_A=70°C
P_D
2
1.28
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-30
±12
-3
-2.4
-6
2
1.28
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
48
62.5 °C/W
74
110 °C/W
35
40 °C/W
56
62.5 °C/W
81
110 °C/W
40
48 °C/W
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