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AO4600 Datasheet, PDF (1/10 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor | |||
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AO4600
Complementary Enhancement Mode
Field Effect Transistor
General Description
The AO4600 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO4600L is a Green
Product ordering option. AO4600 and AO4600L are electrically identical.
Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 6.9A (VGS = 10V) -5A (VGS = -10V)
RDS(ON)
< 27mâ¦
< 49m⦠(VGS =- 10V)
< 32mâ¦
< 64m⦠(VGS =- 4.5V)
< 50mâ¦
< 120m⦠(VGS = -2.5V)
D2
D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±12
Continuous Drain TA=25°C
6.9
Current A
TA=70°C
ID
5.8
Pulsed Drain CurrentB
IDM
40
Power Dissipation
TA=25°C
TA=70°C
PD
2
1.44
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±12
-5
-4.2
-30
2
1.44
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Typ
Maximum Junction-to-AmbientA
Maximum Junction-to-AmbientA
t ⤠10s
Steady-State
RθJA
48
74
Maximum Junction-to-LeadC
Steady-State
RθJL
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
1 / 10
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