AO4490 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4490
30V N-Channel MOSFET
General Description
The AO4490 uses advanced trench technology to provide excellent R_{DS(ON) , low gate charge and}
operation with gate voltages as low as 4.5V, while retaining a 20V V_{GS(MAX) rating. It is ESD protected.}
This device is suitable for use as a load switch and general purpose applications.
Features
V_DS (V) = 30V
I_D = 16A
(V_GS = 10V)
R_DS(ON) < 7.2mΩ (V_GS = 10V)
R_DS(ON) < 10mΩ (V_GS = 4.5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^AF
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Avalanche Current ^G
I_AR
Repetitive avalanche energy L=0.3mH ^G
E_AR
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
16
13
120
30
135
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
32
62
45
75
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
18
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
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