AO4466 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4466
30V N-Channel MOSFET
General Description
The AO4466 uses advanced trench technology to The AO4466 uses advanced trench technology to
provide excellent R_{DS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM}
applications. The source leads are separated to allow a Kelvin connection to the source, which may be
used to bypass the source inductance.
Features
V_DS (V) = 30V
I_D = 10A
R_DS(ON) < 23mΩ
R_DS(ON) < 35mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^AF
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^{B, G}
I_AR
Repetitive avalanche energy 0.1mH ^{B, G}
E_AR
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
10
7
64
3.1
2
12
7
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
34
62
40
75
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
18
24
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
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