AO4442 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4442
75V N-Channel MOSFET
General Description
The AO4442 uses advanced trench technology to provide excellent R_DS(ON) , low gate charge and
operation with gate voltages from 4.5V to 25V. This device is suitable for use as a load switch or in PWM
applications.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
75V
3.1A
< 130mΩ
< 165mΩ
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
75
±25
3.1
2.5
20
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
31
59
Maximum Junction-to-Lead
Steady-State
R_θJL
16
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
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