English
Language : 

AO4440 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor
AO4440
60V N-Channel MOSFET
General Description
The AO4440 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. This
device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = 60V
ID = 5A (VGS = 10V)
RDS(ON) < 55mΩ (VGS = 10V)
RDS(ON) < 75mΩ (VGS = 4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
60
±20
5
4
20
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
38
69
50
80
Maximum Junction-to-Lead C
Steady-State
RθJL
24
30
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
www.freescale.net.cn