AO4435 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO4435
30V P-Channel MOSFET
General Description
The AO4435 uses advanced trench technology to provide excellent R_DS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
V_DS = -30V
I_D = -10.5A
(V_GS = -20V)
R_DS(ON) < 14mΩ (V_GS = -20V)
R_DS(ON) < 18mΩ (V_GS = -10V)
R_DS(ON) < 36mΩ (V_GS = -5V)
SOIC-8
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation ^{A TA=25°C}
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH ^B
E_AR
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±25
-10.5
-8
-80
3.1
2.0
-20
60
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A Steady State
R_θJA
32
60
Maximum Junction-to-Lead ^C
Steady State
R_θJL
17
Max
40
75
24
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
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