AO4433 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO4433
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO4433 uses advanced trench technology to ^{provide excellent R}DS(ON)^{, and ultra-low low gate}
charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The
device is ESD protected. Standard product AO4433 is Pb-free (meets ROHS & Sony 259 specifications).
AO4433L is a Green Product ordering option.
AO4433 and AO4433L are electrically identical.
Features
V_DS (V) = -30V
I_D = -11 A
(V_GS = -20V)
R_DS(ON) < 14mΩ (V_GS = -20V)
R_DS(ON) < 18mΩ (V_GS = -10V)
ESD Rating: 1.5KV HBM
SOIC-8
Top View
S
D
S
D
S
D
G
D
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±25
-11
-9.7
-50
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
28
54
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
21
Max
40
75
30
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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