AO4430 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4430
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO4430/L uses advanced trench technology to provide excellent R_{DS(ON,) shoot-through immunity, body diode}
characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU
core power conversion.
AO4430 and AO4430L are electrically identical.
Features
V_DS (V) = 30V
I_D = 18A (V_GS = 10V)
R_DS(ON) < 5.5mΩ (V_GS = 10V)
R_DS(ON) < 7.5mΩ (V_GS = 4.5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current ^AF
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH ^B
E_AR
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
18
15
80
3
2.1
30
135
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
31
59
40
75
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
16
24
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
1/5
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