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AO4421 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor
AO4421
60V P-Channel MOSFET
General Description
The AO4421 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R . DS(ON) This device is ideal for load switch and battery protection applications.
Features
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS = -4.5V)
-60V
-6.2A
< 40mΩ
< 50mΩ
SO8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-60
±20
-6.2
-5
-40
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
Typ
RθJA
24
54
RθJL
21
Max
40
75
30
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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