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| AO4312 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 36V N-Channel MOSFET | |||
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AO4312
36V N-Channel MOSFET
General Description
The AO4312 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON)
and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Features
VDS
36V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
23A
< 4.5mâ¦
< 6.2mâ¦
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
36
±20
23
18
264
45
101
4.2
2.7
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ⤠10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
25
50
Maximum Junction-to-Lead
Steady-State
RθJL
12
Max
30
60
15
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/6
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