AO4260 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 60V N-Channel MOSFET

AO4260
60V N-Channel MOSFET
General Description
The AO4260 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and switching power losses are minimized due to an
extremely low combination of R , _DS(ON) Ciss and Coss. This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial powersupplies and LED backlighting.
Features
V_DS
60V
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS =4.5V)
18A
< 5.2mΩ
< 6.3mΩ
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
60
±20
18
14
130
65
211
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
31
59
Maximum Junction-to-Lead
Steady-State
R_θJL
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
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