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| AO4240 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 40V N-Channel MOSFET | |||
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AO4240
40V N-Channel MOSFET
General Description
The AO4240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON)
and Crss. In addition,switching behavior is wellcontrolled with a "Schottky style" soft recovery body diode.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
40V
24A
< 3.3mâ¦
< 4.3mâ¦
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TA=25°C
TA=70°C
ID
Pulsed Drain Current C
IDM
Avalanche Current C
IAS
Avalanche energy L=0.1mH C
EAS
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
40
±20
24
19
170
75
281
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ⤠10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
31
59
Maximum Junction-to-Lead
Steady-State
RθJL
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/6
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