AO3434A Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AO3434A
30V N-Channel MOSFET
General Description
The AO3434A combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
Features
V_DS
30V
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS =4.5V)
R_DS(ON) (at V_GS =2.5V)
4A
< 52mΩ
< 60mΩ
< 78mΩ
Typical ESD protection
HBM Class 3A
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±12
4
3
20
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
70
100
Maximum Junction-to-Lead
Steady-State
R_θJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
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