AO3422 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO3422
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO3422 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. It offers
operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch.
Features
V_DS (V) = 55V
I_D = 2.1A (V_GS = 4.5V)
R_DS(ON) < 160mΩ (V_GS = 4.5V)
R_DS(ON) < 200mΩ (V_GS = 2.5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
55
±12
2.1
1.7
10
1.25
0.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
75
115
100
150
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
48
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
www.freescale.net.cn