AO3421E Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V P-Channel MOSFET

AO3421E
30V P-Channel MOSFET
General Description
The AO3421E combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R . _DS(ON) This device is ideal for load switch and battery protection applications.
Features
V_DS
I_D (at V_GS=-10V)
-30V
-3A
R_DS(ON) (at V_GS=-10V)
< 95mΩ
R_DS(ON) (at V_GS=-4.5V)
< 160mΩ
Typical ESD protection
HBM Class 2
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±20
-3
-2
-18
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
70
100
Maximum Junction-to-Lead
Steady-State
R_θJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
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