AO3409 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3409
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO3409 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM ^{applications.}Standard Product AO3409 is Pb-free
(meets ROHS & Sony 259 specifications). AO3409L is a Green Product ordering option. AO3409 and
AO3409L are electrically identical.
Features
V_DS (V) = -30V
I_D = -2.6 A (V_GS = -10V)
R_DS(ON) < 130mΩ (V_GS = -10V)
R_DS(ON) < 200mΩ (V_GS = -4.5V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±20
-2.6
-2.2
-20
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
70
100
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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