AO3402 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

AO3402, AO3402L
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO3402 uses advanced trench technology to provide excellent R , DS(ON) low gate charge and
operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
applications. AO3402L( Green Product ) is offered in a lead-free package.
Features
V_DS (V) = 30V
I_D = 4 A
R_DS(ON) < 55mΩ (V_GS = 10V)
R_DS(ON) < 70mΩ (V_GS = 4.5V)
R_DS(ON) < 110mΩ (V_GS = 2.5V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
4
3.4
15
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
70
100
90
125
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
63
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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