AO3401A Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3401A
30V P-Channel MOSFET
General Description
The AO3401A uses advanced trench technology to _{provide excellent RDS(ON) , low gate charge and operation}
gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications.
Features
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS =-4.5V)
R_DS(ON) (at V_GS=-2.5V)
-30V
-4.0A
< 50mΩ
< 60mΩ
< 85mΩ
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±12
-4
-3.2
-27
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
70
100
Maximum Junction-to-Lead
Steady-State
R_θJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
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