AO3400A Datasheet, PDF (1/5 Pages) Alpha Industries – N-Channel Enhancement Mode Field Effect Transistor

AO3400A
30V N-Channel MOSFET
General Description
The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R DS(ON) _{. This device is suitable for use as a load switch or in PWM applications.}
FeatuIres
V_DS
30V
D ^{(at V}GS^=10V)
5.7A
DS(ON) ^{(at V}GS^=10V)
< 26.5mΩ
DS(ON) ^{(at V}GS ^{= 4.5V)}
< 32mΩ
DS(ON) ^{(at V}GS ^{= 2.5V)}
< 48mΩ
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±12
5.7
4.7
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
70
100
Maximum Junction-to-Lead
Steady-State
R_θJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
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