AO3160 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 600V,0.04A N-Channel MOSFET

AO3160
600V,0.04A N-Channel MOSFET
General Description
The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels
of performance and robustness in popular AC-DC ^{applications.} By providing low RDS(on) , C_iss and C_rss along with
guaranteed avalanche capability this device can be adopted quickly into new and existing offline powersupply
designs.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
700V@150℃
0.04A
< 500Ω
< 600Ω
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current^A,F
T_A=70°C
Pulsed Drain Current ^B
Peak diode recovery dv/dt
I_D
I_DM
dv/dt
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
600
±20
0.04
0.03
0.12
5
1.39
0.89
-50 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
70
100
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
63
Max
90
125
80
Units
V
V
A
V/ns
W
°C
Units
°C/W
°C/W
°C/W
1/5
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