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S102S02F Datasheet, PDF (4/13 Pages) Sharp Electrionic Components – IT(rms)≤8A, Non-Zero Cross type SIP 4pin Triac output SSR
■ Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol Rating Unit
Input
Forward current
Reverse voltage
RMS ON-state current
Peak one cycle surge current
IF
VR
IT(rms)
Isurge
50 *3 mA
6
V
8 *3
A
80 *4
A
Repetitive
S102S01
400
peak OFF-state voltage S202S01 VDRM
600
V
Output
Non-Repetitive
S102S01
400
peak OFF-state voltage S202S01 VDSM
600
V
Critical rate of rise of ON-state current dIT/dt
50
A/µs
Operating frequency
f
45 to 65 Hz
*1Isolation voltage
Viso(rms) 4.0
kV
Operating temperature
Topr −25 to +100 ˚C
Storage temperature
*2Soldering temperature
Tstg −30 to +125 ˚C
Tsol
260
˚C
*1 40 to 60%RH, AC for 1minute, f=60Hz
*2 For 10s
*3 Refer to Fig.1, Fig.2
*4 f=50Hz sine wave, Tj=25˚C start
S102S01 Series
S202S01 Series
Soldering area
■ Electro-optical Characteristics
Input
Output
Parameter
Forward voltage
Reverse current
Repetitive peak OFF-state current
ON-state voltage
Holding current
Critical rate of rise of OFF-state voltage
Critical rate of rise of OFF-state voltage at commutaion
Minimum trigger current
Isolation resistance
Symbol
VF
IR
IDRM
VT(rms)
IH
dV/dt
(dV/dt)c
IFT
RISO
Transfer Turn-on time
charac-
teristics
Turn-off time
S102S01
ton
S202S01
S102S01
toff
S202S01
Thermal resistance
Rth(j-c)
Rth(j-a)
Conditions
IF=20mA
VR=3V
VD=VDRM
IT(rms)=2A, Resistance load, IF=20mA
−
VD=2/3•VDRM
Tj=125˚C, VD=2/3•VDRM, dIT/dt=−4.0A/ms
VD=12V, RL=30Ω
DC500V, 40 to 60%RH
VD(rms)=100V, AC50Hz
IT(rms)=2A, Resistance load, IF=20mA
VD(rms)=200V, AC50Hz
IT(rms)=2A, Resistance load, IF=20mA
VD(rms)=100V, AC50Hz
IT(rms)=2A, Resistance load, IF=20mA
VD(rms)=200V, AC50Hz
IT(rms)=2A, Resistance load, IF=20mA
Between junction and case
Between junction and ambient
MIN.
−
−
−
−
−
30
5
−
1010
−
−
−
−
−
−
TYP.
1.2
−
−
−
−
−
−
−
−
−
−
−
−
4.5
40
(Ta=25˚C)
MAX. Unit
1.4 V
100 µA
100 µA
1.5 V
50 mA
− V/µs
− V/µs
8 mA
−
Ω
1
ms
1
10
ms
10
− ˚C/W
−
Sheet No.: D4-A02301EN
4