English
Language : 

PR308S31ESU Datasheet, PDF (4/14 Pages) Sharp Electrionic Components – Output current, IT(rms) 8.0A
■ Absolute Maximum Ratings
(Ta=25˚C)
Input
Parameter
Forward current
Reverse voltage
RMS ON-state current
Peak one cycle surge current
Symbol
IF
VR
IT(rms)
Isurge
Rating
50 *3
6
8 *3
80 *4
Unit
mA
V
A
A
Output
Repetitive
peak OFF-state voltage
Non-Repetitive
peak OFF-state voltage
VDRM
600
V
VDSM
600
V
Critical rate of rise of ON-state current dIT/dt
50
A/µs
Operating frequency
*1Isolation voltage
Operating temperature
f
45 to 65 Hz
Viso(rms) 3.0
kV
Topr −20 to +80 ˚C
Storage temperature
*2Soldering temperature
Tstg −30 to +100 ˚C
Tsol
260
˚C
*1 40 to 60%RH, AC for 1minute, f=60Hz
*2 For 10s
*3 Refer to Fig.1, Fig.2
*4 f=50Hz sine wave, Tj=25˚C start
PR308S31ESU
Soldering area
■ Electro-optical Characteristics
Parameter
Symbol
Conditions
Forward voltage
Input
Reverse current
VF
IF=20mA
IR
VR=3V
ON-state voltage
VT(rms) IT(rms)=2A, Resistance load, IF=20mA
Minimum Operating current
IOP(rms)
VOUT(rms)=240V
Output Open circuit leak current
Ileak(rms)
VOUT(rms)=240V
Critical rate of rise of OFF-state voltage dV/dt
VD=2/3•VDRM
Critical rate of rise of OFF-state voltage at commutaion (dV/dt)c Tj=125˚C, VD=2/3•VDRM, dIT/dt=−4.0A/ms
Minimum trigger current
Transfer Isolation resistance
charac-
teristics Turn-on time
Turn-off time
IFT
VD=12V, RL=30Ω
RISO
DC500V, 40 to 60%RH
ton
VD(rms)=200V, AC50Hz
toff IT(rms)=2A, Resistance load, IF=20mA
Thermal resistance
Rth(j-c)
Rth(j-a)
Between junction and case
Between junction and ambient
MIN.
−
−
−
−
−
30
5
−
1010
−
−
−
−
TYP.
1.2
−
−
−
−
−
−
−
−
−
−
4.5
40
(Ta=25˚C)
MAX. Unit
1.4 V
100 µA
1.5 V
50 mA
10 mA
− V/µs
− V/µs
10 mA
−
Ω
1 ms
10 ms
− ˚C/W
−
Sheet No.: D4-A03601EN
4