PC81510NSZ0F Datasheet, PDF (4/11 Pages) Sharp Electrionic Components – DIP 4pin Darlington Phototransistor Output, Low Input Current Photocoupler

■ Absolute Maximum Ratings
(T_a=25˚C)
Parameter
Symbol Rating
Unit
Forward current
I_F
*1 _{Peak forward current IFM}
10
mA
200
mA
Reverse voltage
V_R
6
V
Power dissipation
P
15
mW
Collector-emitter voltage V_CEO
35
V
Emitter-collector voltage V_ECO
6
V
Collector current
I_C
80
mA
Collector power dissipation P_C
150
mW
Total power dissipation P_tot
170
mW
*2 _{Isolation voltage}
V_{iso (rms)}
5.0
kV
Operating temperature
T_opr −30 to +100 ˚C
Storage temperature
T_stg −55 to +125 ˚C
*3 _{Soldering temperature}
T_sol
260
˚C
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
■ Electro-optical Characteristics
Parameter
Forward voltage
Input Reverse current
Terminal capacitance
Collector dark current
Output Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector current
Collector-emitter saturation voltage
Transfer _{Isolation resistance}
charac-
teristics ^{Floating capacitance}
Rise time
Response time
Fall time
Symbol
V_F
I_R
C_t
I_CEO
BV_CEO
BV_ECO
I_C
V_{CE (sat)}
R_ISO
C_f
t_r
t_f
Conditions
I_F=5mA
V_R=4V
V=0, f=1kHz
V_CE=10V, I_F=0
I_C=0.1mA, I_F=0
I_E=10µA, I_F=0
I_F=0.5mA, V_CE=2V
I_F=1mA, I_C=2mA
DC500V, 40 to 60%RH
V=0, f=1MHz
V_CE=2V, I_C=10mA, R_L=100Ω
PC81510NSZ0F
MIN.
−
−
−
−
35
6
3
−
5×10¹⁰
−
−
−
TYP.
1.2
−
30
−
−
−
14
−
1×10¹¹
0.6
60
53
MAX.
1.4
10
250
1 000
−
−
60
1.0
−
1.0
300
250
(T_a=25˚C)
Unit
V
µA
pF
nA
V
V
mA
V
Ω
pF
µs
µs
Sheet No.: D2-A03902FEN
4