GP2S40J0000F Datasheet, PDF (4/10 Pages) Sharp Electrionic Components – Detecting Distance : 3mm Phototransistor Output, Compact Refl ective Photointerrupter

■ Absolute Maximum Ratings
Parameter
Forward current
Input Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Output
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
∗1_{Soldering temperature}
∗_{1 For 5s}
Symbol
I_F
V_R
P_D
V_CEO
V_ECO
I_C
P_C
P_tot
T_opr
T_stg
T_sol
(T_a=25˚C)
Rating
Unit
50
mA
6
V
75
mW
35
V
6
V
20
mA
75
mW
100
mW
−25 to +85 ˚C
−40 to +100 ˚C
260
˚C
Soldering area
GP2S40J0000F
■ Electro-optical Characteristics
Parameter
Symbol
Forward voltage
Input
V_F
Reverse current
I_R
Output
Transfer
charac-
teristics
Collector dark current
∗2 _{Collector Current}
∗3 _{Leak current}
Response time
Rise time
Fall time
I_CEO
I_C
I_LEAK
t_r
t_f
∗_{2 The condition and arrangement of the reflective object are shown below.}
∗_{3 No reflective object}
Condition
I_F=20mA
V_R=3V
V_CE=20V
I_F=20mA, V_CE=5V
I_F=20mA, V_CE=5V
V_CE=2V, I_C=100μA,
R_L=1kΩ, d=4mm
● Test Arrangement for Collector Current
Al evaporation
d=4mm glass plate
MIN.
−
−
−
0.5
−
−
−
TYP.
1.2
−
1
−
−
50
50
(T_a=25˚C)
MAX. Unit
1.4
V
10
μA
100 nA
3
mA
500 nA
150
150
μs
Sheet No.: D3-A02001EN
4