GP2S27J0000F Datasheet, PDF (4/14 Pages) Sharp Electrionic Components – SMT, Detecting Distance : 0.7mm Phototransistor Output, Compact Refl ective Photointerrupter

■ Absolute Maximum Ratings
Parameter
Forward current
Input Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Output
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
∗1_{Soldering temperature}
∗_{1 For 5s or less}
Symbol
I_F
V_R
P
V_CEO
V_ECO
I_C
P_C
P_tot
T_opr
T_stg
T_sol
(T_a=25˚C)
Rating
Unit
50
mA
6
V
75
mW
35
V
6
V
20
mA
75
mW
100
mW
−25 to +85 ˚C
−40 to +100 ˚C
260
˚C
GP2S27J0000F Series
Soldering area:
The hatched area more than
0.5mm away from the lower
edge of package as shown
in the figure below.
0.5mm 0.5mm
■ Electro-optical Characteristics
Parameter
Symbol
Condition
Forward voltage
Input
Reverse current
V_F
I_F=20mA
I_R
V_R=6V
Output
Transfer
charac-
teristics
Collector dark current
∗2 _{Collector Current}
Response time
∗3 _{Leak current}
Rise time
Fall time
I_CEO
I_C
t_r
t_f
I_LEAK
V_CE=20V
I_F=4mA, V_CE=2V
V_CE=2V, I_C=100μA,
R_L=1kΩ, d=1mm
I_F=4mA, V_CE=2V
∗_{2 The condition and arrangement of the reflective object are shown below.}
The rank splitting of collector current (IC) shall be executed according to the table below.
Rank
Collector current, IC [μA]
(IF=4mA, VCE=2V)
A
20 to 42
B
34 to 71
C
58 to 120
∗_{3 Without reflective object.}
Package oleeve color
Yellow
Transparent
Green
● Test Condition and Arrangement for Collector Current
Al evaporation
d=1mm glass plate
MIN.
−
−
−
20
−
−
−
TYP.
1.2
−
1
45
20
20
−
(T_a=25˚C)
MAX. Unit
1.4
V
10
μA
100 nA
120 μA
100
100
μs
100 nA
Sheet No.: D3-A01901EN
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