GP1S39J0000F Datasheet, PDF (4/11 Pages) Sharp Electrionic Components – Gap : 1.5mm, Detector pitch : 1mm 2-phase Phototransistor Output, Compact Transmissive Photointerrupter

■ Absolute Maximum Ratings
Input
Parameter
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Output Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
∗1_{Soldering temperature}
∗_{1 For 5s or less}
Symbol
I_F
V_R
P
V_CE1O
V_CE2O
V_E1CO
V_E2CO
I_C
P_C
P_tot
T_opr
T_stg
T_sol
Rating
50
6
75
(T_a=25˚C)
Unit
mA
V
mW
35
V
6
V
20
mA
75
mW
100
mW
−25 to +85 ˚C
−40 to +100 ˚C
260
˚C
GP1S39J0000F
Soldering area
■ Electro-optical Characteristics
Parameter
Symbol
Forward voltage
Input
V_F
Reverse current
I_R
∗2 _{Output Collector dark current}
I_CEO
Collector current
∗2 _{Transfer Collector current ratio}
I_C
I_C1/I_C2
charac- Collector-emitter saturation voltage V_CE(sat)
teristics
Response time
Rise time t_r
Fall time
t_f
∗_{2 Output and Transfer characteristics are common to both phototransistors}
Condition
I_F=20mA
V_R=3V
V_CE=20V
V_CE=5V, I_F=4mA
V_CE=5V, I_F=4mA
I_F=8mA, I_C=50μA
V_CE=5V, I_C=100μA, R_L=1kΩ
MIN.
−
−
−
130
0.67
−
−
−
TYP.
1.2
−
−
−
−
−
50
50
(T_a=25˚C)
MAX. Unit
1.4
V
10
μA
100 nA
520 μA
1.5
−
0.4
V
150
μs
150
μs
Sheet No.: D3-A01301EN
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