LH28F320BFE-PTTL60 Datasheet, PDF (30/37 Pages) Sharp Electrionic Components – 32M (x16) Flash Memory

LHF32FB1
28
1.2.7 Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance⁽³⁾
V_CC=2.7V-3.6V, T_A=0°C to +70°C
Symbol
Parameter
t_WPB
4K-Word Parameter Block
Program Time
t_WMB
32K-Word Main Block
Program Time
t_WHQV1/
t_EHQV1
t_WHOV1/
t_EHOV1
t_WHQV2/
t_EHQV2
t_WHQV3/
t_EHQV3
t_WHRH1/
t_EHRH1
t_WHRH2/
t_EHRH2
t_ERES
Word Program Time
OTP Program Time
4K-Word Parameter Block
Erase Time
32K-Word Main Block
Erase Time
Full Chip Erase Time
(Page Buffer) Program Suspend
Latency Time to Read
Block Erase Suspend
Latency Time to Read
Latency Time from Block Erase
Resume Command to Block
Erase Suspend Command
Page Buffer WP#/ACC=V_IL or V_IH WP#/ACC=V_ACCH
Notes
Command is
Used or not
(In System)
(In Manufacturing) _Unit
Used
Min. _Typ.⁽¹⁾ _Max.⁽²⁾ Min. _Typ.⁽¹⁾ _Max.⁽²⁾
2 Not Used
0.05 0.3
0.04 0.12 s
2
Used
0.03 0.12
0.02 0.06 s
2 Not Used
0.38 2.4
0.31 1.0 s
2
Used
0.24 1.0
0.17 0.5 s
2 Not Used
11 200
9 185 µs
2
Used
7 100
5 90 µs
2 Not Used
36 400
27 185 µs
2
-
0.3 4
0.2 4 s
2
-
2
4
-
0.6 5
40 350
5 10
0.5 5 s
33 350 s
5 10 µs
4
-
5 20
5 20 µs
5
-
500
500
µs
NOTES:
1. Typical values measured at V_CC=3.0V, WP#/ACC=3.0V or 12V, and T_A=+25°C. Assumes corresponding lock bits
are not set. Subject to change based on device characterization.
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
4. A latency time is required from writing suspend command (WE# or CE# going high) until SR.7 going "1" or RY/BY#
going High Z.
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter
than t_ERES and its sequence is repeated, the block erase operation may not be finished.
Rev. 2.44